Table 1 Deep-level defect parameters (trap type, trap energy level (ET), capture cross section (σ), trap density (NT), carrier lifetime (τ), shallow donor concentration (NS)) of Sb-rich and S-rich Sb2S3 films.
From: Revealing composition and structure dependent deep-level defect in antimony trisulfide photovoltaics
Sample | Trap | ET (eV) | σ (cm2) | NT (cm-3) | τ (ns) | NS (cm−3) |
|---|---|---|---|---|---|---|
Sb-rich | E1 | EC−0.31 ± 0.02 | (0.54–8.13) × 10−17 | (3.75–5.63) × 1014 | 2.18 × 103 | 7.71 × 1016 |
E2 | EC−0.60 ± 0.02 | (0.26–4.68) × 10−16 | (1.57–3.31) × 1015 | 6.46 × 101 | ||
E3 | EC−0.69 ± 0.02 | (0.11–1.75) × 10−15 | (1.38–2.01) × 1015 | 2.84 × 101 | ||
S-rich | H1 | EV + 0.64 ± 0.01 | (0.46–1.31) × 10−15 | (0.45–1.58) × 1015 | 4.83 × 101 | 5.13 × 1016 |
H2 | EV + 0.71 ± 0.02 | (0.49–1.17) × 10−16 | (6.71–8.57) × 1014 | 9.97 × 102 |
