Fig. 1: Device architecture and material thicknesses. | Nature Communications

Fig. 1: Device architecture and material thicknesses.

From: Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction

Fig. 1

a 3D schematic of the WSe2 phototransistor with middle (MG) and side gates (SG). The transparent blue layer is hBN on top of metal back gates on SiO2/Si and underneath WSe2 (channel material). The top layer in the green (‘Se’ atom) and black (‘W’ atom) ball-stick structure represents WSe2. b Optical microscope image of the device with MG and SGs defined at the bottom and S/D contacts on the top. c AFM scans indicate that the WSe2 channel is 7 nm thick and the hBN gate dielectric is 15 nm thick.

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