Fig. 5: Photoresponsive characteristics of a bilayer MoS₂ phototransistor in the image sensor array.

I_ds–V_gs curves of a transparent top-gate phototransistor based on bilayer MoS₂ channel and IZO top-gate at V_ds = 5 V under a red, b green, and c blue light illumination with various incident power densities (λ_ex = 638 nm (R), 532 nm (G), and 405 nm (B), and P_inc = 0.1, 0.2, 0.4, 0.8, 1.6, 3.2 mW cm⁻²). d Photoresponsivity, e specific detectivity, and f photosensitivity of the MoS₂ phototransistor under R, G, B light illumination calculated from Fig. 4a–c. g–i Photoswitching characteristics of the MoS₂ phototransistor under temporal light illumination with λ_ex = 638, 532, and 405 nm, respectively. All switching curves were measured at V_ds = 5 V, V_gs = −35 V, and P_inc = 4.5 mW cm⁻² with illumination frequency of 1 Hz. Rise and fall times were extracted from 20% to 80% and from 80% to 20% of the maximum current, respectively.