Fig. 4: Reconfigurable neuromorphic interface.
a (Top) Schematics of three consecutive processes of deposit-and-removal protein nanowires in a memristor structure. (Bottom) Corresponding memristive status in the device in each stage. b Average Vth (Nâ=â6) in the three activated stages (i.e., deposited with protein nanowires). c Circuit diagram of a reconfigurable artificial neuron, with its threshold voltage (Vth) for neuronal firing modulable by activating different paths of memristor arrays (M). d Measured Vth (Nâ=â6) in the artificial neuron with different paths of memristor arrays activated. The error bars in the future represent the standard deviation (s.d.).
