Fig. 5: Potential applications toward high-density ferroelectric memories.
From: Nanoscale bubble domains with polar topologies in bulk ferroelectrics
The voltage-induced domain evolution was performed by PFM. A preprocessing −40-V voltage was first applied to a 1*1-μm2 bubble region for the initialization, then a tip voltage of (±30 V, 1−7 s) was applied to one point to trigger donut-like topological domains with opposite polarizations. The whole process is reversible. Detailed tip-voltage-manipulated evolution of domain morphologies can be seen in Supplementary Figs. 17−19. Tests are carried out under dry atmosphere condition (humidity = 0%).
