Fig. 3: Characteristics of PTCDI-C8 nanowires network vertical phototransistors (VPTs).
a Transfer characteristics of phototransistors under 570 nm with various irradiances compared to that in darkness, VDS = 20 V. b, 2D map of the photocurrent density (J) recorded by scanning the irradiation wavelength and irradiance, at VG = −50 V, VDS = 20 V. c Photocurrent density value at VG = −50 V (red dots) and VG = 80 V (blue dots) plotted against different irradiances at 570 nm. d Photoresponsivity (R) and photosensitivity (P) versus different irradiances in the depleted area (VDS = 20 V, VG = −50 V, dash line) and in the accumulated area (VDS = 20 V, VG = 80 V, solid line), the photoresponsivity and photosensitivity can reach ≈2 × 105 A/W and 1 × 103 at 570 nm. e, Transfer curves of PTCDI-C8 nanowires VPTs with VDS = 20 V under dark condition or different irradiances at 850 and 940 nm. f Photocurrent density value at VG = −50 V (red dots) and VG = 80 V (blue dots) plotted against different irradiances at 850 nm. Inset: The photoswitching cycles at 850 nm working at accumulated region driven by VDS = 20 V and VG = 60 V. Y-axis demonstrates current density J (mA/cm2). g R and P versus different irradiances in the depleted area (VDS = 20 V, VG = −50 V, dash line) and in the accumulated area (VDS = 20 V, VG = 80 V, solid line), the photoresponsivity and photosensitivity can reach ≈1 × 102 A/W and 1.1 × 102 at 850 nm.
