Fig. 4: Gate voltage control of the magnetoresistance (MR) in FeAs/InAs SLs. | Nature Communications

Fig. 4: Gate voltage control of the magnetoresistance (MR) in FeAs/InAs SLs.

From: Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures

Fig. 4

a Electrical double-layer transistor structure formed on sample A2 (see “Method”). b Resistance and c sheet electron density (n2D) in the FeAs/InAs SL structure at various temperatures under different gate voltages VG = –3, 0, 5 V. d MR curves measured in the FeAs/InAs SL at 2 K with different gate voltages VG = –3, 0, 5 V, under a magnetic field applied perpendicular to the film plane. These MR curves show clear hysteresis due to the ferromagnetism in sample A2. The values of MR ratio are given in the parentheses after the gate voltages.

Back to article page