Fig. 6: AFM imaging of device regions verifying the formation of a QD monolayer. | Nature Communications

Fig. 6: AFM imaging of device regions verifying the formation of a QD monolayer.

From: High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene

Fig. 6

a–b Height profile across an Au electrode where the QD SAM is first assembled and subsequently scraped away mechanically using an AFM tip. Measured height difference ~ 5.2 nm. c–d Height profile across an Au electrode where the QD SAM is not assembled, due to photoresist protection, but with the area still scraped mechanically with the AFM tip. Measured height difference ~ 1.3 nm.

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