Fig. 1: Ag-PVP nanowire networks with memristive junctions.
From: Avalanches and edge-of-chaos learning in neuromorphic nanowire networks
a Optical microscope image of a self-assembled Ag-PVP NWN (scalebar = 100 μm). b Biased nanowire-nanowire junctions promote Ag+ migration and redox-induced Ag filament formation through the electrically insulating, ionically conducting PVP layer. Filament gap distance s varies from \({s}_{\max }\) to 0. Junction resistance is modelled as a constant series resistance (\({R}_{r}={R}_{{{\rm{off}}}}={G}_{{{\rm{off}}}}^{-1}\)), in parallel with constant filamentary resistance (\({R}_{{{\rm{f}}}}={{{\rm{G}}}}_{0}^{-1}\)) and time-dependent tunnelling resistance (Rt). c Junction conductance (\({G}_{{{\rm{jn}}}}={R}_{{{\rm{jn}}}}^{-1}\)) and s, as a function of state variable Λ(t). As ∣Λ∣ increases, the junction transitions from high resistance to tunnelling and then ballistic transport.
