Fig. 5: Voltage dependence of avalanche simulations.
From: Avalanches and edge-of-chaos learning in neuromorphic nanowire networks
Avalanche size S (a) and life-time T (b) distributions in simulated NWNs at voltages V* = 0.7, 1.0, 1.05, 1.8 (black, red, cyan, blue). Statistics are produced from simulations on an ensemble of 1000 independently generated networks with 1000 nanowires and 3000–3200 junctions (size 100 × 100 μm2 and density 0.10 nw (μm)−2). The time-frame (Δt = 160 ms, corresponding to average inter-event-interval at V* = 1) chosen to bin switching events is the same for each V* and distributions are linearly binned with same bin-sizes for each curve.
