Fig. 3: Bulk quantum Hall effect in BaMnSb2.
From: Spin-valley locking and bulk quantum Hall effect in a noncentrosymmetric Dirac semimetal BaMnSb2
a Magnetic field dependences of in-plane resistivity (ρxx, blue) and Hall resistivity (ρxy, red) at T = 1.4 K for the Hall bar sample B#1, measured with field perpendicular to the Sb-plane up to 40 T. Hall plateaus in ρxy are clearly observed. b Normalized inverse Hall resistivity (\({\rho }_{{xy}}^{0}/{\rho }_{{xy}}\)) and in-plane resistivity (ρxx) versus \({B}_{F}/B\). \(1/{\rho }_{{xy}}^{0}\) is defined as the step size between the first and the second plateaus of \(1/{\rho }_{{xy}}\) (see the inset to panel d). \({B}_{F}\) is the frequency of the SdH oscillations in ρxx. c Landau level fan diagram built from the SdH oscillations of ρxx at 1.4 K. d The second derivative, \(-{d}^{2}{\rho }_{{xx}}/d{B}^{2}\), which is in phase with ρxx, clearly reveals the oscillation peak splitting near B = 17 T. The inset shows the inverse of ρxy in panel a as a function of BF/B. 1/\({{\rho }}_{{xy}}^{0}\) is determined by the vertical interval between steps. e, f Field dependences of ρxx and ρxy at various temperatures (T = 1.4, 3.8, 15, 30, 50, and 100 K), up to 90 T. The inset in (e) shows the SEM image of sample B#1 with Hall bar geometry fabricated by FIB.
