Fig. 4: Optoelectronic properties of SEPD-QLEDs. | Nature Communications

Fig. 4: Optoelectronic properties of SEPD-QLEDs.

From: Large-area patterning of full-color quantum dot arrays beyond 1000 pixels per inch by selective electrophoretic deposition

Fig. 4

a Schematic illustration of the device structure of SEPD processed QLEDs. b Energy band diagram of the QLEDs. c Images and microscopy images of SEPD G-, R-, GR-QLEDs, G-QLED pixels, and R-QLED pixels. Scale bars, 5 and 0.1 mm, respectively. d Normalized EL spectra of green and red SEPD QLEDs. e Current density−luminance−voltage (J−L−V) characteristics of the green and red SEPD QLEDs. f Current efficiency (ηC) as a function of current density for the SEPD QLED and IJP-QLED.

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