Fig. 2: Transport properties in pulsed magnetic field up to 61.5 T.
From: Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator
a Magnetic field dependent Rxx and Ryx at 1 V ≤ Vg ≤ 6 V. At Vg = 4 V, the C = −1 state is completely suppressed for μ0H > 30 T, followed by the C = 0 state characterized by a broad zero Hall plateau. The black dashed line denotes the Rxx = 0.5 h/e2 plateau. b Transport properties at −2 V ≤ Vg ≤ 0 V. Zero Hall plateau exist in a broad magnetic field range over 50 T. c Transport behaviors in the 2D hole gas regime. With the decrease of Vg, QH plateaus with a positive Chern number start to form. At Vg = −16 V, Ryx forms a wide Hall plateau at h/e2 and Rxx drops to zero. d Characteristic transport behaviors of the 2D electron gas. With the increase of Vg from 8 V to 16 V, the C = −1 Hall plateau onsets at a higher magnetic field, becomes broader and approaches the C = 0 plateau only at the high-field limit. Electron-type QH plateaus with higher Chern numbers C = −2 and −3 also start to form.
