Fig. 2: Evolution of the two-Te-peak structure in the real-space hot-electron distribution with increasing bias voltage, Vb. | Nature Communications

Fig. 2: Evolution of the two-Te-peak structure in the real-space hot-electron distribution with increasing bias voltage, Vb.

From: Quasiadiabatic electron transport in room temperature nanoelectronic devices induced by hot-phonon bottleneck

Fig. 2

a–h 2D images of Te obtained with SNoiM, where d shows the image in the opposite bias polarity. The device studied is similar to that for Fig. 1, with a slightly different geometry of the constriction channel of 450 nm width and 640 nm length. White dotted lines are guides for the eyes to show the mesa edges that define the constriction. The current–voltage trend is shown in the inset.

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