Fig. 2: ILG-induced magnetization changes in SAF structures.
From: Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets
a Schematic illustration of ionic liquid gating of the pristine SAF films. b Magnetic hysteresis loops obtained from ex situ SQUID measurements for several VG applied in the following sequence: 0 V (pristine state), +2 V, +4 V, −2 V, and −3 V. c VG dependence of MR/MS (left axis) and MSt (right axis). d DW velocity at a fixed current density (1.2 × 108 A cm−2) plotted as a function MR/MS. The dotted line corresponds to simulation results based on a 1D analytical model. The error bars in d correspond to 1 SD.
