Fig. 4: Knot devices controlled via ILG.
From: Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets
a Sketch of experimental setup for a knot device controlled by ionic liquid gating. b Optical micrograph of a typical knot device. Current-induced domain wall motion of a SAF knot device for VG = −3 V (c) and +4 V (d). Current pulses with a magnitude and length of 1.2 × 108 A cm−2 and 50 ns, respectively, were used. The injected pulse numbers are labeled at the low right corner and the current DW position is marked with the yellow arrows in each figure.
