Fig. 1: Design of a strain-engineered graphene nanostructure array.
From: Pseudo-magnetic field-induced slow carrier dynamics in periodically strained graphene
a Schematic illustration of a strained graphene nanopillar array possessing pseudo-magnetic fields of positive (+BS, blue arrow) and negative (−BS, green arrow) signs. Inset: magnified view of a single strained graphene nanopillar structure. Non-uniform tensile strain at the edges of the nanopillar induces pseudo-magnetic fields of opposite signs (−BS and +BS) in the two valleys of the graphene band structure, thus forcing electrons in the K and K′ valleys to circulate in the opposite directions. b Schematic illustration showing Landau quantization at the K and K′ points in the first Brillouin zone of graphene in the presence of pseudo-magnetic fields. c Tilted-view SEM image of a strained graphene nanopillar array. Scale bar, 2 μm. Inset: magnified SEM image. Scale bar, 500 nm. d AFM topography of the strained graphene nanopillar array. Scale bar, 1 μm.
