Fig. 1: Illustration of the different carrier transport regimes in twisted bilayer graphene.
From: Carrier transport theory for twisted bilayer graphene in the metallic regime
Electron–phonon scattering dominates except at very low temperature. At intermediate temperature (TF, TBG) ≪ T < TVHS, resistivity is linear-in-T and at high temperature (T ∼ εVHS), resistivity saturates as a function of temperature. Inset: electron-impurity scattering dominates the transport at low temperature. Resistivity increases for T ≪ TF and decreases for T ≳ TF. This nonmonotonicity arises from the charged impurity scattering40, and when the system crosses over from the degenerate to the nondegenerate regime.
