Fig. 3: The persistence of linear-T behaviour to low temperature is due to inter-band scattering.
From: Carrier transport theory for twisted bilayer graphene in the metallic regime
Electron–phonon resistivity for tBG within the Dirac model for a intraband scattering and b interband scattering. Dotted and dashed lines indicate TBG/4 and TF/2, respectively. Interband resistivity shows a transition to linear-in-T at ∼TF/2 compared to intraband resistivity which shows a transition around ∼TBG/4. In the interband regime, the striking persistence of linear-in-T behavior for T ≪ TBG is observed.
