Fig. 4: Close to the magic angle, the electron–phonon resistivity in tBG is very sensitive to the twist angle exhibiting a variation of several orders of magnitude when vF = cph and unrelated to Mott insulation or superconductivity. | Nature Communications

Fig. 4: Close to the magic angle, the electron–phonon resistivity in tBG is very sensitive to the twist angle exhibiting a variation of several orders of magnitude when vF = cph and unrelated to Mott insulation or superconductivity.

From: Carrier transport theory for twisted bilayer graphene in the metallic regime

Fig. 4

The number of these sharp dips in resistivity and the angles at which they occur provide information about lattice relaxation13. a The rigid lattice model of Bistritzer and MacDonald12 predicts that the resistivity will have multiple dips with decreasing twist angle (corresponding to three dips per magic angle). b The relaxation model of ref. 64 gives only three sharp dips close to a single value of the magic angle. c The relaxation model of ref. 58 gives three sharp dips close to a single value of the magic angle and another dip when vF becomes quite close to cph but never goes below it.

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