Fig. 3: Experiment results to analyze the effect of changing parameters on the kernel characteristics in the temporal kernel system.
From: Time-varying data processing with nonvolatile memristor-based temporal kernel
The read current at 0.5 V of the memristor for the pulse stream ‘0000’–‘1111’ that corresponds to 0–15 in the inset table in (e). a The read current at 0.5 V of the memristor for each input under the conditions of 1 MΩ RL, 4 V signal pulse height, 100 µs width, 4 V REF pulse height, and 100 µs width. b–e The read current at 0.5 V of the memristor for each input when RL, pulse width, pulse height, and REF pulse height are changed respectively from the condition of (a). The various parameter settings for each figure were summarized in Table 1. The kernel responses for each input of the temporal kernel optimized for the MNIST recognition are shown in (f). Responses to inputs showing high prevalence in the dataset were well separated (marked by red circles).
