Fig. 4: Chemical driven electricity performance in EIP.

a The specific peak power plotted as a function of EIP mass. Two kinds of EIP devices are prepared. One is made by EIP crystals with sliver epoxy electrode. The other one is made by EIP thin films in the range of (1–100) μm on the prepatterned indium tin oxide substrate (50 μm channel length). b Pr dependence of specific power. c Enhanced output voltage achieved by series configuration circuit. d Extended working time by parallel configuration circuit. For devices in the series and parallel configuration circuit test, the gap distance between the electrodes is 1.2 mm and the cross-sectional area is 16 mm2 for each device.