Fig. 2: Electrode size-independent filamentary conduction and filament observation.
From: A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
(a) Dependence of the resistance on the electrode area measured for both the devices in the NV-RS mode and V-RS mode. Error bar: resistance distribution obtained from three randomly selected devices. Cross-sectional TEM images of the TST device after (b) NV-SET switching and (c) V-TS.
