Fig. 5: SOT switching in all sputtered BiSb-MTJ.
a R-H curve for the all sputtered BiSb-MTJ device. b Current-driven SOT switching in the all sputtered BiSb-MTJ device (1 µm × 3 µm MTJ size, and σ∥EA).
Fig. 5: SOT switching in all sputtered BiSb-MTJ. | Nature Communications
