Fig. 4: Nanoelectromechanical memristor.
a current-voltage characteristics of a mechanical switch demonstrating a novel bipolar switching behavior, b change of electrical performance (on/off ratio) and defectiveness (Raman ID/IG ratio32) during repeated cycling (c) current after single write cycle at 25 V and various delay and read cycles at 0 V and −5 V, respectively, (inset) representation of pulse sequence, (d) remnant polarization as a function of previously applied highest voltage (Vprime), (inset) representation of polarization hysteresis, (e) evolution of device resistance depending on previously applied priming voltage, (f) change of reset transition voltage as a function of previously applied priming voltage.
