Fig. 1: Laser design and fabrication schematics.
From: High-performance lasers for fully integrated silicon nitride photonics
a A cross-sectional schematic illustration of the fabricated InP/Si/SiN laser integrated with Si photonic circuits and SiN photonic circuits after the laser passivation and before probe metal deposition (top). Three insets on the bottom show the fabrication process including SiN processing and SOI bonding (left), Si processing and InP bonding (middle), and InP processing (right). MQW multiple quantum well. b Top-view schematic illustration of the E-DBR laser. c A device optical photograph showing InP/Si/SiN DBR laser arrays. The lasers consist of four sections including the SiN grating, InP/Si gain section, Si reflector, and phase tuner, with schematics and dimensions shown, respectively.
