Fig. 1: Electronic structure and Fermi surface cuts of EuCd2As2 from ARPES and DFT in para- and FM phase, crystal structure, and resistivity.
From: Visualizing band selective enhancement of quasiparticle lifetime in a metallic ferromagnet
a Crystal structure of EuCd2As2. b Temperature-dependent normalized resistivity, ρ(T)/ρ(300K), where ρ(300K) ≈ 4 × 10−4 ω cm. c, d FS results from ARPES measurements at 40 and 10 K, respectively, where TC = 26 K is FM transition temperature. e, f ARPES intensity along the black dashed lines in (c, d) measured at 40 and 10 K, respectively. The orange arrow points to the bands crossing the Fermi level; the green arrow points to the fully occupied hole band at the center; the black arrow points to a possible splitting of the bands at 40 K. The color scale shows relative photoelectron intensity in panels (c–f). g, h FS calculated using DFT in paramagnetic and FM states, respectively. Color scale shows probability of finding available electronic state. i, j Band dispersion from DFT calculations along the black dashed line in (c). Bands undergo approximately k-independent rigid (Zeeman) energy shifts in the FM phase.
