Fig. 3: Temperature dependence of field effect in a doubly aligned h-BN/graphene/h-BN.
From: Correlated states in doubly-aligned hBN/graphene/hBN heterostructures
a Colour map of the sample resistance as a function of gate doping and temperature for sample S12. b Line cuts of data in (a) at different temperatures. Black solid triangles and black solid circles denote peaks identified from band filling and Eq. (2), respectively. c Arrhenius plot of representative resistive peaks in (a), with their fitted thermal excitation gaps indicated.
