Fig. 2: Analysis of the origin of dark current.

a Temperature dependence of J_D at V = − 0.5 V for the four perovskite photodiodes. Open circles are experimental data, whiskers represent standard deviation. Linear fits according to J_D ∝ exp(−E_a/k_BT) are shown by dashed lines, standard errors are also reported. b Comparison between experimental activation energies E_a (bars with solid outline, whiskers are standard error) and energetic barriers (E_{C −} E_HOMO, bars with dashed outline, whiskers indicate the uncertainty of energy levels) for the different Pb:Sn compositions. c Schematic representation of the thermal charge generation mechanism at the EBL-perovskite interface. d Comparison between the statistical distribution of the experimental J_D (open circles, with boxplots showing median (center line), 25th and 75th percentiles (box limits) and 5th and 95th percentiles (whiskers)) and the simulated dark current density (see Supplementary Fig. 9) resulting from interfacial generation for different values of Φ (squares) with uncertainty (gray area) at −0.5 V for Sn contents x = 0, 0.25, 0.40, and 0.50. Simulation details are presented in Supplementary Note 1.