Fig. 5: Schematic illustration of the CF system evolution in Pt/HfO2/Pt memristor.

a Initial state of the device. b Under a positive electric field, dissociated O2− ions from HfO2 are generated near the BE and move from the BE to the TE, resulting in localized oxygen depletion. c Growth of Hf-rich or O-vacancy CFs in the RS layer. d The as-grown CF bridge and the annealing effect of Joule heat generated by the high current. e The as-formed quasi-core-shell CF system consists of conductive h-Hf6O and the surrounding nonconductive monoclinic HfO2 (m-HfO2) shell. f Longitudinal-section view of the core-shell CF system. g Transition of the surrounding m-HfO2 shell into t-HfO2 driven by the high current through the Hf6O CF in the RESET process. h Ruptured h-Hf6O CF and its t-HfO2 shell.