Fig. 4: Finite-bias measurements.
a Differential conductance measurements at zero magnetic field in the Coulomb blockade regime. The height of the diamond pattern gives the characteristic charging energy \(\frac{{e}^{2}}{{C}_{{{{{{\rm{total}}}}}}}}\approx 90\;{\upmu {{{{{\rm{eV}}}}}}}\). Note that this energy will include the contribution from the finite DOS, which should be subtracted to yield the electrostatic component that contributes the KIL. This yields \(\frac{{e}^{2}}{2C}\approx 72\;{\upmu {{{{{\rm{eV}}}}}}}\). b Interference data for the innermost edge mode at ν = 3. The QPCs are tuned to partially reflect the inner mode and fully transmit the two outer modes. The positive slope indicates that under these conditions the device is in the Coulomb-dominated regime where the bulk-edge interaction is strong. c Differential conductance measurements at B = 2.5 T, the ν = 1 state. The checkerboard pattern suggests that the bias is close to symmetric, although the fact that there is some tilt to the pattern suggests that there is some asymmetry. d Oscillation amplitude from a FFT versus VSD for ν = 1. The minima in the pattern correspond to the nodes in the checkerboard pattern, allowing extraction of ΔVSD ≈ 162 μV. e Differential conductance measurement for the inner mode at ν = 3. f FFT amplitude versus VSD. The spacing between minima gives ΔVSD = 45 μV, indicating a relatively low velocity which is to be expected for an inner mode.
