Fig. 3: Bunching timescales of hBN ODMR-active defects.
From: Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
a Second-order intensity-correlation (g2(\(\tau\))) measurement of an ODMR-active defect, defect B, measured at 1.5Psatoptical excitation (laser-power saturation in Supplementary Fig. 3), showing the dynamics out to 1-ms time delay \((t=\tau - t_{0})\), non-background corrected. The data (circles) is fit to a bi- and tri-exponential fit (solid curves). b g2(\(\tau\)) measurement of a defect that does not show ODMR, out to 1-ms delay, measured at 0.2Psatoptical excitation, non-background corrected. The grey circles are the data and the solid line is a bi-exponential fit. For background correction analysis see Supplementary Fig. 11. d–f The distribution of antibunching (\({\tau }_{{\mbox{ab}}}\)) and bunching (\({\tau }_{{\mbox{b(additional)}}}\) and \({\tau }_{{\mbox{b}}}\)) timescales from 40 measurements of 18 defects. Data for defects that show ODMR is in red and defects that do not show ODMR in blue. Defects that don’t show ODMR are not plotted in (e) because this data contains high error, as shown in (c). c A scatter plot (left plot) and histogram (right plot) of the error on the fractional error on the fit \({\left(\frac{{\sigma }_{{\mbox{b(additional)}}}}{{\tau }_{{\mbox{b(additional)}}}}\right)}\) of the additional bunching timescale, for ODMR and non-ODMR-active defects.
