Fig. 2: Electrical measurement results of different TiN/HZO/TiN devices: 15-nm-thick Hf0.5Zr0.5O2, 10-nm-thick Hf0.5Zr0.5O2, 10-nm-thick Hf0.4Zr0.6O2, 10-nm-thick Hf0.6Zr0.4O2, and the nanolaminated 10-nm-thick Hf0.5Zr0.5O2 films. | Nature Communications

Fig. 2: Electrical measurement results of different TiN/HZO/TiN devices: 15-nm-thick Hf0.5Zr0.5O2, 10-nm-thick Hf0.5Zr0.5O2, 10-nm-thick Hf0.4Zr0.6O2, 10-nm-thick Hf0.6Zr0.4O2, and the nanolaminated 10-nm-thick Hf0.5Zr0.5O2 films.

From: Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Fig. 2

a The 2Pr of 15-nm-thick Hf0.5Zr0.5O2 device measured by ±3 V P–V loop and the corresponding leakage currents measured at 2 V, as a function of switching cycles, which was performed by applying bipolar voltage pulses of ±5 V at f = 500 kHz. b The trend of 2Pr changes of different devices with the switching cycles at a low field of ±1.8 MV/cm. c The corresponding leakage current changes with the cycles. d The rejuvenation process of different devices by applying field pulses of ±3 MV/cm. e Ten cycles of fatigue/rejuvenation process on the 15-nm-thick Hf0.5Zr0.5O2 device under ±2.2 V, 5 × 106 bipolar pulses for fatigue and ±4.0 V, 1 × 104 bipolar pulses for recovery.

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