Fig. 2: Optoelectronic properties of the SPPD.

a, b I–V curves and steady-state currents at zero bias under dark and irradiation conditions (530 and 940 nm lights at 1 mW cm⁻²). c Bipolar spectral photoresponse of the SPPD as a function of wavelength from 400 to 1000 nm at a 10 nm interval. d Charge generation rate (C_R) distribution within the p⁺-i-n-p-p⁺ structure vs. wavelength of incident light. e Energy band diagrams of the SPPD (P_Vis and P_NIR serially connected through PCBM); under equilibrium state (top), 530 nm light irradiation onto the P_Vis (bottom-left), and 940 nm light irradiation onto the P_NIR (bottom-right). f–h Experiments for substantiating the working mechanism of (e). f Schematic illustration of equivalent circuits for the separate perovskite diodes (P_Vis and P_NIR) connected with an electrical wire. I–V curves of g P_NIR in response to the 530 nm light irradiation onto the P_Vis and h P_Vis in response to the 940 nm light irradiation onto the P_NIR.