Fig. 2: Nanostructure of p-i-n device and EDS analysis.
From: Waveguide coupled III-V photodiodes monolithically integrated on Si
a Bright field scanning transmission electron microscopy (STEM) cross-section overview image of a 350 nm straight device. b Energy dispersive spectroscopy (EDS) overview map of the p-i-n device. Here, P, Pt, and Au appear blue because the EDS signal of P K-shell is near to the Pt and Au M-shell. c EDS elemental profiles acquired along Line 1 defined in a. d High-resolution bright field scanning transmission electron microscopy (STEM) images taken at Si/n-InP interface (orange box marked in a). e High-resolution bright field STEM images taken at n-InP/i-InGaAs interface (green box marked in a), inset: high-resolution STEM of the i-InGaAs.
