Fig. 5: Static characterization of the p-i-n photodetectors.
From: Waveguide coupled III-V photodiodes monolithically integrated on Si
a Responsivity of T1, T3 (T-shape), and S4 (straight), inset: energy band diagram of the p-i-n device. b I–V curves of T3 without light (dark green) and with 1320 nm waveguide coupled laser power varying from 0.1 mW to 3.16 mW. c Dark current (at −1 V) dependence on device architecture and device width. d Responsivity (at −2 V) dependence on device architecture and device width. e f3dB dependence on device architecture and device width. f Schematic of the cross-section of a straight device, WPD is the device width and WWG is the Si waveguide width. g Schematic of the top-view of a T-shape device.
