Fig. 1: Experimental setup.
From: Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations
a False-color scanning electron micrograph of a device nominally identical to the one tested. The white scale bar represents 100 nm. The S-T0 qubit is formed under plunger gates P1 and P2. The sensor quantum dot is formed under gate S. b Pauli spin blockade at the (3,1)–(4,0) charge transition. The trapezoid in the (4,0) charge configuration indicates the spin blockade region. S1 is the measured charge-sensor signal. Positions L and M are the singlet load and the measure positions, respectively. Position M also serves as the idle position of the plunger gate dc voltages and defines the position ϵ = 0. c Cross section of the device along the dashed arrow in a.
