Fig. 2: Standard characterization of antiferroelectric ZrO2 thin film and heterostructure.
From: Antiferroelectric negative capacitance from a structural phase transition in zirconia
a Polarization P vs. electric field Ea characteristics of a TiN/ZrO2(10 nm)/TiN capacitor measured using a standard ferroelectric tester at 1 kHz. b Low magnification high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) image of the cross-section of a representative TiN/HfO2/Al2O3/ZrO2/TiN heterostructure grown on Si showing all the layers distinguishable with clear interfaces. Fast Fourier transforms of high magnification HAADF-STEM images of the same sample show amorphous rings in the HfO2 layer and discrete diffraction spots in the ZrO2 layer consistent with the tetragonal <010> zone axis.
