Table 3 Performance parameters of the devices with and without SVA treatment.

From: Diffusion interface layer controlling the acceptor phase of bilayer near-infrared polymer phototransistors with ultrahigh photosensitivity

 

∆Iph (μA)

Vo (V) in the dark

Off-state current (μA)

Hole mobility (cm2·V−1·s−1)

EQE

R (A/W)

Iph/Idark

tr (μs)

tf (μs)

#5 W/O SVA

32

26

2.8 × 10-5

0.464

3000

2000

22

261

84

#6 With SVA

79

0

1.7 × 10-6

0.752

13000

8700

1.7 × 107

93

74

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