Fig. 5: Transport and magnetic measurements.
From: Topotactic fluorination of intermetallics as an efficient route towards quantum materials
a Temperature dependence of the electrical resistance R of the LaFeSiF0.10 crystal at magnetic fields ranging from 0 to 9T. b Upper panel: temperature dependence of the electrical resistance of the LaFeSiFx single crystals at x = 0.10, 0.30, and 0.70 normalized with respect to the resistance value measured at 10 K, with a picture of the LaFeSiF0.3 crystal in the inset. Blue and green dotted lines represent the criteria of 90% and 10% of the normal state résistance value used to defined Tc90% and Tc10%, respectively. Lower panel: magnetic susceptibility of the same crystals measured in zero field cooled (ZFC) conditions at 0.5 mT, with field applied along the c-axis of the crystal. The signal was corrected from demagnetizing field. c Temperature–composition phase diagram summarizing the superconducting transition temperatures as measured by resistivity and magnetic susceptibility.
