Fig. 5: Electrical properties of COF films.

a Schematic diagram of a FET device using PyTTA-TPA film as working materials. Scale bar 10 nm. b AFM image of the PyTTA-TPA COF film used for FETs with a thickness of ~30 nm. Scale bar 4 μm. c Transfer characteristics (IDS vs VG) of the PyTTA-TPA COF device at VDS = −40 V. d Hole mobility of the PyTTA-TPA COF-based FET devices under different channel lengths. e Distribution histogram of hole mobility. f LSV curves of Cu foil, graphene, PyTTA-TPA, PyTTA-BPyDCA, and PyTTA-BPDA COF films in 0.5 M H2SO4. g Overpotential of graphene, PyTTA-TPA, PyTTA-BPyDCA, and PyTTA-BPDA COF films at current density of 10 mA cm−2. h Tafel plots of Cu foil, graphene, PyTTA-TPA, PyTTA-BPyDCA, and PyTTA-BPDA COF films. i Nyquist plots of Cu foil, graphene, PyTTA-TPA, PyTTA-BPyDCA, and PyTTA-BPDA COF films. j LSV plots of PyTTA-TPA COF film before and after 1000 CV cycles. k Compared with reported materials54,55,57.