Fig. 4: Interpretation of the transient reflection response of a GaAs wafer.
From: Extracting quantitative dielectric properties from pump-probe spectroscopy
a Broadband transient reflection map and spectral cut at 500 fs (blue line) indicating that the transient spectral features are unconventional if interpreted as the transient absorption with the bandgap not lying on any of the spectral features. b Broadband ∆ε2 extracted using the KK analysis and a spectral cut at 500 fs (blue line) showing that the broadband spectra now resembles that of a typical inorganic semiconductor with the photobleach of ∆ε2 occurring at the bandgap. The green line in the side panels indicates the bandgap of GaAs.
