Fig. 3: Effect of thickness-dependent strain on OFET stability.

a Transfer curves of the 200 nm DNTT OFET before storage and after storage for 1 month and five years. V_DS = −60 V. b Variation in the normalized mobility of OFETs with different thicknesses during the five-year storage period. c The bias stress effect tests of the 200 and 20 nm devices after five years of storage. I(t)/I_DS (the solid line) denotes the ratio of the drain current at different times (t) to the initial drain current value (I_DS). V_DS = −60 V, V_GS = −60 V. d Transfer curves of the 200 and 20 nm DNTT OFETs before and after the bias stress test. 5 and 30 V represent the threshold voltage shift. V_DS = −60 V. The arrows denote the shift direction. e The 32,500 cycle switching tests of the 200 nm DNTT OFET after five years of storage (test frequency = 10 Hz, V_DS = −30 V, V_GS = −30 and 0 V, alternately). The channel length and width of the tested OFETs are 100 and 1000 μm, respectively.