Fig. 5: Potential application of the ultrastable OFET. | Nature Communications

Fig. 5: Potential application of the ultrastable OFET.

From: Balancing the film strain of organic semiconductors for ultrastable organic transistors with a five-year lifetime

Fig. 5

The driven current of a the 200 nm and b 20 nm DNTT OFETs versus time. The upper insets in a and b are pictures of the OLED driven by DNTT devices at different times. The bottom inset in a is the circuit diagram of the OLED driven by the DNTT OFET. G, S, and D indicate the gate electrode, source electrode, and drain electrode, respectively. The brightness of the OLED driven by the 200 nm DNTT OFET shows no visible change during the long-term operation, while it decays to a very weak value for the OLED driven by the 20 nm DNTT OFET. The bias was set as VGS = −80 V and VDS = −4 V.

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