Table 1 The device stability of OFETs in the literature.
No. | Semiconductor | Strategy | Film thickness | Shelf life/operational stability | Degradation | Ref. |
|---|---|---|---|---|---|---|
1 | Pentacene | Encapsulation | 500 nm | 458 daysa, b | 50% | |
2 | DNTT | Ambient | 30 nm | 246 daysa | 50% | |
3 | TIPS-pentacene | Top-gate self-encapsulation | – | 210 daysa | 7% | |
4 | Ph-PXX | High ionization potential | 50 nm | 150 daysa | 15% | |
5 | TIPS-pentacene | Semiconductor/polymer blend | – | ~30 daysa | <10% | |
6 | TIPS-pentacene diF-TES-ADT | Top-gate self-encapsulation Microcrystal | 70 nm | ~5.9*105 secondsc | ~5% | |
7 | IDTBT | Top-gate self-encapsulation Water-free | - | ~25 hoursc | ~5% | |
8 | DNTT | Ps-buffered TPGDA dielectric | 70 nm | 6 monthsd | Bare shift | |
9 | TIPS-pentacene | Self-encapsulation | 1 µm | 1400 hours | 75% | |
10 | DNTT | PVS-buffered TPGDA dielectric | 70 nm | 8 months | 8.3% | |
11 | DNTT | pIBA, pEGDMA, pPFDA dielectric | 50 nm | 140 days | >38% | |
12 | DNTT | AlOx-SAM dielectric | 25 nm | 470 days | 20.8% | |
13 | DNTT | Strain balance | 200 nm | 5 yearsa | 10% | This work |
