Fig. 3: Electric control of the cAFM Chern insulator in a dual gated device.
From: Electric control of a canted-antiferromagnetic Chern insulator
a Anti-symmetrized ρyx as a function of magnetic field μ0H near optimal doping in Device 3. μ0HC1 ~ 3 T is identified when ρyx reaches −0.999 h/e2. b, c ρyx and ρxx as functions of gate-induced carrier density nG and electric field D, at fixed magnetic μ0H = 3 T. The droplet shapes enclosed by the black dashed line in b, c show the quantization area where ρyx < −0.9 h/e2 and ρxx < 0.1 h/e2. Insert of b is a schematic of the dual gated device. d, ρyx (blue) and ρxx (red) vs. D at nG = 1.1 × 1012 cm−2, which are linecuts obtained from b, c, indicated by the red arrows. Optimal Dopt/ɛ0 = −0.3 V/nm denoted by black arrow is identified by ρyx ~ h/e2 and vanishing ρxx. ρyx and ρxx in b–d are unsymmetrized.
