Fig. 4: Mechanism of electric control of cAFM Chern insulator.
From: Electric control of a canted-antiferromagnetic Chern insulator
a RMCD as a function of μ0H under selected nG and D. (n1, n2, n3) = (3.1, −3.1, −9.3) × 1012 cm−2, (D1, D2, D3, D4) = (−0.8, 0.3, 0.8, −0.3) V/nm. The data shows that RMCD (n1, D1) = RMCD (n1, D2), and RMCD (n2, D3) = RMCD (n2, D4), i.e. for fixed nG, RMCD signal and spin–flop field has neglibigle dependence on D. The spin–flop field changes significantly when tuning nG. b RMCD map as a function of D and nG at μ0H = 2.75 T. Inset: schematics of cAFM states tuned by nG. The data in (a) and (b) show that the magnetoelectric effect is solely determined by doping. c Illustration of band alignment of top and bottom surfaces under different D. See Maintext for details.
