Fig. 2: Determine the SOT-induced effective field and spin Hall angle by planar Hall effect.
From: Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field
a Schematic for the coordinate system and the SOT-induced effective fields considered in the NiFe/Bi2Se3 heterostructure. The inset is a top view of the Hall device by optical microscopy and the layout for the planar Hall measurement. b Planar Hall resistance RH of NiFe/Bi2Se3 at ±10 mA applied current as a function of the external magnetic field angle θ. The right axis represents the difference of the Hall resistances RDH at positive and negative currents. c Angular-dependent RDH measured at different input currents. Each solid curve represents the fitting result. d SOT-induced effective fields HOOP and HT as a function of applied current. The lines are the linear fitting results.
