Fig. 3: Hysteresis and VI in the MASnX3 perovskite TFTs.
From: High-performance hysteresis-free perovskite transistors through anion engineering
a Transfer characteristics of I-pristine and I/Br/Cl TFTs measured at different scan speeds. b I 3d3/2 core level spectra of the I-pristine and I/Br/Cl perovskites. c Calculated relative interaction strengths of halide anions with VI sites in MASnI3 and MASn(I/Br)3. d Illustration of the passivation effects of a VI defect by a Cl anion.
