Fig. 5: High-power operation and material comparison.
a Electro-optic s-parameter characterization at high optical intensities shows an improvement in RF responses. b Measured eye diagrams at 10 Gb/s and 15 Gb/s. The high-bandwidth photodiode is directly connected to a real-time oscilloscope for recording eye diagrams without equalization. No low-pass RF filter is used in the measurement. Measured eye diagrams confirm increased eye opening and no signal degradation when operating the modulator at high optical intensities. c QE factors as a function of optical intensity for bit rates of 10 Gb/s, 12 Gb/s, and 15 Gb/s show an improved and robust modulation performance for higher input intensity. The high-bandwidth photodiode is directly connected to a real-time oscilloscope for recording eye QE factors without equalization. No low-pass RF filter is used in the measurement. d Material parameter comparison of 3C-SiC with widely used optical materials showing the distinct advantages of SiC for high power handling. Scale bars, 33 picoseconds.
